Vishay Siliconix SiR5112DP-T1-RE3 MOSFETs N-Channel 100 V (D-S) MOSFET PowerPAK 1212-8S, 14.9 mohm a. 10V 14.4 mohm a. 7.5V

Fall Time: 4 ns

Rise Time: 4 ns

Technology: Si

Channel Mode: Enhancement

REACH - SVHC: Details

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 10.6 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 52 W

Typical Turn-On Delay Time: 9 ns

Typical Turn-Off Delay Time: 11 ns

Id - Continuous Drain Current: 40.7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 25 S

Rds On - Drain-Source Resistance: 14.9 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V