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Width: 4.4 mm
Height: 2.6 mm
Length: 3.6 mm
Fall Time: 18 us
Rise Time: 18 us
Output Type: NPN Phototransistor
Unit Weight: 80 mg
Configuration: 1 Channel
Mounting Style: SMD/SMT
Isolation Voltage: 3750 Vrms
Number of Channels: 1 Channel
If - Forward Current: 50 mA
Vf - Forward Voltage: 1.4 V
Current Transfer Ratio: 400 %
Pd - Power Dissipation: 170 mW
Maximum Collector Current: 4 mA
Current Transfer Ratio - Min: 400 %
Maximum Operating Temperature: + 100 C
Minimum Operating Temperature: - 30 C
Maximum Collector Emitter Voltage: 80 V
Collector-Emitter Breakdown Voltage: 80 V
Maximum Collector Emitter Saturation Voltage: 200 mV
