SemiQ GCMX010A120B3B1P Half-Bridge SiC 1200V 10mohm MOSFET Half-Bridge Module
Manufacturer: SemiQ Model: GCMX010A120B3B1P - Contact
Fall Time: 28 ns
Rise Time: 17 ns
Technology: SiC
Mounting Style: Screw Mount
Transistor Polarity: N-Channel
Pd - Power Dissipation: 577 W
Vgs - Gate-Source Voltage: - 5 V, + 20 V
Typical Turn-On Delay Time: 43 ns
Typical Turn-Off Delay Time: 86 ns
Id - Continuous Drain Current: 173 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 9 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 1.8 V
- Quality Engagement
- Easy change and return
- Delivery Avaliable
- Favorable payment