ROHM Semiconductor YQ30NL10SEFHTL Schottky Diodes Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD for Automotive: The YQ30NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat

Name: ROHM Semiconductor YQ30NL10SEFHTL Schottky Diodes Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD for Automotive: The YQ30NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
Brand: ROHM Semiconductor

ManufacturerROHM Semiconductor(View more products from this manufacturer)

ModelYQ30NL10SEFHTL

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Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

If - Forward Current: 30 A

Ir - Reverse Current: 150 uA

Vf - Forward Voltage: 780 mV

Vr - Reverse Voltage: 100 V

Ifsm - Forward Surge Current: 200 A

Maximum Operating Temperature: + 150 C

Vrrm - Repetitive Reverse Voltage: 100 V

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