ROHM Semiconductor YQ20NL10CDFHTL Schottky Diodes Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
ModelYQ20NL10CDFHTL
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Technology: Si
Configuration: Dual Anode Common Cathode
Mounting Style: SMD/SMT
If - Forward Current: 20 A
Ir - Reverse Current: 70 uA
Vf - Forward Voltage: 650 mV
Vr - Reverse Voltage: 100 V
Ifsm - Forward Surge Current: 150 A
Maximum Operating Temperature: + 150 C
Vrrm - Repetitive Reverse Voltage: 100 V
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