ROHM Semiconductor UT6ME5TCR MOSFETs DFN 100V 2A DUAL CH

Fall Time: 5 ns, 25 ns

Rise Time: 6 ns, 5.4 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 2.8 nC, 6.7 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 6 ns, 6.3 ns

Typical Turn-Off Delay Time: 15 ns, 31 ns

Id - Continuous Drain Current: 2 A, 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1 S, 1.3 S

Rds On - Drain-Source Resistance: 207 mOhms, 840 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V