ROHM Semiconductor UMZ7NTR BJTs - Bipolar Transistors NPN/PNP 12V 500MA

Width: 1.25 mm

Height: 0.9 mm

Length: 2 mm

Technology: Si

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 150 mW

DC Current Gain hFE Max: 680

Gain Bandwidth Product fT: 320 MHz, 260 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 15 V

Continuous Collector Current: 500 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 270

Collector- Emitter Voltage VCEO Max: 12 V

Collector-Emitter Saturation Voltage: 90 mV, 100 mV