ROHM Semiconductor UMZ1NFHATR BJTs - Bipolar Transistors TRANSISTOR HIGH RELIABILITY

Technology: Si

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 150 mW

DC Current Gain hFE Max: 560 at 1 mA, 6 V

Gain Bandwidth Product fT: 180 MHz, 140 MHz

Emitter- Base Voltage VEBO: 7 V, 6 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 150 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120 at 1 mA, 6 V

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 400 mV, 500 mV