ROHM Semiconductor SSTA13T116 BJTs - Bipolar Transistors SURFACE NPN DARL

Width: 1.6 mm

Height: 1.1 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 10000 at 10 mA, 5 V

Gain Bandwidth Product fT: 125 MHz

Emitter- Base Voltage VEBO: 10 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: 300 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 5000 at 10 mA, 5 V

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 1.5 V