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Fall Time: 31 ns
Rise Time: 44 ns
Technology: SiC
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 172 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 427 W
Vgs - Gate-Source Voltage: - 4 V, + 22 V
Typical Turn-On Delay Time: 30 ns
Typical Turn-Off Delay Time: 64 ns
Id - Continuous Drain Current: 118 A
Maximum Operating Temperature: + 175 C
Forward Transconductance - Min: 16 S
Rds On - Drain-Source Resistance: 22.1 mOhms
Vds - Drain-Source Breakdown Voltage: 650 V
Vgs th - Gate-Source Threshold Voltage: 5.6 V
