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Fall Time: 74 ns
Rise Time: 21 ns
Technology: SiC
Unit Weight: 11.405 g
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 14 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 35 W
Vgs - Gate-Source Voltage: - 6 V, + 22 V
Typical Turn-On Delay Time: 16 ns
Typical Turn-Off Delay Time: 35 ns
Id - Continuous Drain Current: 3.7 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 0.4 S
Rds On - Drain-Source Resistance: 1.5 Ohms
Vds - Drain-Source Breakdown Voltage: 1.7 kV
Vgs th - Gate-Source Threshold Voltage: 4 V
