ROHM Semiconductor SCS304APC9 Schottky Silicon Carbide Diodes 650V 3rd Gen SiC SBD 4A 6nC TO-220ACP
ModelSCS304APC9
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Technology: SiC
Unit Weight: 1.800 g
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
If - Forward Current: 4 A
Ir - Reverse Current: 20 uA
Vf - Forward Voltage: 1.5 V
Vr - Reverse Voltage: 650 V
Pd - Power Dissipation: 34 W
Ifsm - Forward Surge Current: 27 A
Maximum Operating Temperature: + 175 C
Vrrm - Repetitive Reverse Voltage: 650 V
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