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ROHM Semiconductor SCS240AE2C Schottky Barrier Diode

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Speed: No Recovery Time > 500mA(Io)

VRM(V): 650V

Diode type: Silicon Carbide Schottky

Mounting Type: Through Hole

Reverse voltage: 650

Diode Configuration: 1Pair Common Cathode

Reverse recovery time: 0ns

Current - DC Forward If: 40A

Operating temperature range: 175 C(Max)

Spannung – DC Reverse Vr Max: 650V

Spannung – Vorwärts (Vf) Max: 1.55V@20A

Current - Average Rectified Io per Diode: 20 A(DC)

Current - Reverse Leakage with Vr Applied: 400uA@600V

Datasheet


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