ROHM Semiconductor SCS212AGHRC Schottky Silicon Carbide Diodes 650V 12ASiC SBD AEC-Q101 Qualified
ModelSCS212AGHRC
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Technology: SiC
Unit Weight: 1.800 g
REACH - SVHC: Details
Configuration: Single
Qualification: AEC-Q101
Mounting Style: Through Hole
If - Forward Current: 12 A
Ir - Reverse Current: 240 uA
Vf - Forward Voltage: 1.55 V
Vr - Reverse Voltage: 650 V
Pd - Power Dissipation: 93 W
Ifsm - Forward Surge Current: 43 A
Maximum Operating Temperature: + 175 C
Vrrm - Repetitive Reverse Voltage: 650 V
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