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ROHM Semiconductor S4103UCCFSAGG N-channel SiC power MOSFET (1200V) bare die | EMIN.CO.TH

Discrete & Power Modules
ROHM Semiconductor S4103UCCFSAGG N-channel SiC power MOSFET (1200V) bare die

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ROHM Semiconductor S4103UCCFSAGG N-channel SiC power MOSFET (1200V) bare die

ManufacturerROHM Semiconductor(View more products from this manufacturer)

ModelS4103UCCFSAGG

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Channel Type: N Channel

Transistor Case Style: DIE

Drain Source Voltage Vds: 1.2

Operating Temperature Max: 175 °C

Continuous Drain Current Id: 95

Mosfet Module Configuration: Single

Drain Source On State Resistance: 27.5

Gate Source Threshold Voltage Max: 5.6

Datasheet

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