ROHM Semiconductor RX3P12BATC16 MOSFETs RX3P12BAT is a low on-resistance power MOSFET suitable for switching applications.

Fall Time: 365 ns

Rise Time: 225 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 P-Channel

Qg - Gate Charge: 385 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 201 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 72 ns

Typical Turn-Off Delay Time: 750 ns

Id - Continuous Drain Current: 120 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 55 S

Rds On - Drain-Source Resistance: 12.3 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 4 V