ROHM Semiconductor RV2C010UNT2L Power MOSFET, N Channel, 20 V, 1 A, 470 Milliohms, DFN1006, 3 Pins, Surface Mount
ModelRV2C010UNT2L
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No. of Pins: 3
Channel Type: N Channel
Power Dissipation: 400 mW
Transistor Mounting: Surface Mount
Transistor Case Style: DFN1006
Drain Source Voltage Vds: 20 V
Operating Temperature Max: 150 °C
Continuous Drain Current Id: 1 A
Drain Source On State Resistance: 470 mOhm
Gate Source Threshold Voltage Max: 1 V
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