ROHM Semiconductor RSH110N03TB1 MOSFET
ModelRSH110N03TB1
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Vgs(th): 2.5 V
Gate Charge (Qg): 17nC
Power consumption: 2W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 30V
Continuous drain current: 11A
Input Capacitance (Ciss): 1300pF
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 10.7mOhm
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