ROHM Semiconductor RGWS00TS65DGC13 IGBT Transistors TO247 650V 50A TRNCH
ModelRGWS00TS65DGC13
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 245 W
Gate-Emitter Leakage Current: 200 nA
Maximum Gate Emitter Voltage: 30 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 2 V
Continuous Collector Current at 25 C: 88 A
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