ROHM Semiconductor RGT8BM65DGTL1 IGBT Transistors 5us Short-Circuit Tolerance, 650V 4A, FRD Built-in, TO-252, Field Stop Trench IGBT

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 62 W

Gate-Emitter Leakage Current: 200 nA

Maximum Gate Emitter Voltage: 30 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 2.1 V

Continuous Collector Current at 25 C: 12 A