ROHM Semiconductor RGT40NL65DGTL IGBT Transistors RGT40NL65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.
ModelRGT40NL65DGTL
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Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Pd - Power Dissipation: 161 W
Gate-Emitter Leakage Current: 200 nA
Maximum Gate Emitter Voltage: 30 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 2.1 V
Continuous Collector Current at 25 C: 40 A
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