ROHM Semiconductor RGS50TSX2DHRC11 IGBT Transistors 1200V 25A Field Stop Trench IGBT. RGS50TSX2DHR is a highly reliable IGBT for the general inverter for automotive and industrial.
ModelRGS50TSX2DHRC11
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Technology: Si
Unit Weight: 16 g
REACH - SVHC: Details
Configuration: Single
Qualification: AEC-Q101
Mounting Style: Through Hole
Pd - Power Dissipation: 395 W
Gate-Emitter Leakage Current: 500 nA
Maximum Gate Emitter Voltage: 30 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 2.1 V
Continuous Collector Current at 25 C: 50 A
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