ROHM Semiconductor RGPZ10BM40FHTL IGBT Transistors 430V 20A 1.6V Vce Ignition IGBT
ModelRGPZ10BM40FHTL
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Technology: Si
REACH - SVHC: Details
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Pd - Power Dissipation: 107 W
Gate-Emitter Leakage Current: 15 uA
Maximum Gate Emitter Voltage: 10 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 460 V
Collector-Emitter Saturation Voltage: 2.1 V
Continuous Collector Current at 25 C: 20 A
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