ROHM Semiconductor RGA80TSX2EHRC11 IGBTs 10 s Short-Circuit Tolerance, 1200V 69A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 468 W

Gate-Emitter Leakage Current: 500 nA

Maximum Gate Emitter Voltage: 30 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2 V

Continuous Collector Current at 25 C: 105 A