ROHM Semiconductor R8019KNXC7G MOSFETs 800V 19A, TO-220FM, High-speed switching Power MOSFET: The R8xxxKNx series are high-speed switching products, Super Junction , that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching.

Fall Time: 60 ns

Rise Time: 50 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 65 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 83 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 35 ns

Typical Turn-Off Delay Time: 110 ns

Id - Continuous Drain Current: 19 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 265 mOhms

Vds - Drain-Source Breakdown Voltage: 800 V

Vgs th - Gate-Source Threshold Voltage: 4.5 V