ROHM Semiconductor R6086YNZC17 MOSFETs Nch 600V 33A, TO-3PF, Power MOSFET: R6086YNZ is a power MOSFET with low on - resistance, suitable for switching.

Fall Time: 50 ns

Rise Time: 60 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N Channel

Qg - Gate Charge: 110 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 114 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 55 ns

Typical Turn-Off Delay Time: 155 ns

Id - Continuous Drain Current: 33 A

Maximum Operating Temperature: + 150 C

Rds On - Drain-Source Resistance: 44 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 6 V