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Width: 1.6 mm
Height: 0.85 mm
Length: 2.9 mm
Fall Time: 15 ns, 20 ns
Rise Time: 18 ns, 12 ns
Technology: Si
Unit Weight: 14 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 1.6 nC, 3 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 1.25 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 7 ns, 10 ns
Typical Turn-Off Delay Time: 15 ns, 45 ns
Id - Continuous Drain Current: 1.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 1 S
Rds On - Drain-Source Resistance: 215 mOhms, 230 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V, 20 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V, 2 V
