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ROHM Semiconductor MMST4124T146 BJTs - Bipolar Transistors SMT NPN

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Technology: Si

Unit Weight: 8 mg

Mounting Style: SMD/SMT

Transistor Polarity: NPN

DC Current Gain hFE Max: 360 at 2 mA, 1 V

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: 200 mA

Maximum DC Collector Current: 200 mA

DC Collector/Base Gain hfe Min: 120

Collector-Emitter Saturation Voltage: 300 mV

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