ROHM Semiconductor MMST3906T146 BJTs - Bipolar Transistors GP PNP 40V 200MA

Width: 1.6 mm

Height: 1.1 mm

Length: 2.9 mm

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 6.2 W

DC Current Gain hFE Max: 300 at - 10 mA, - 1 V

Gain Bandwidth Product fT: 250 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: - 200 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 30 at - 100 mA, - 1 V

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 400 mV