ROHM Semiconductor HP8KA1TB Nch+Nch 30V Power MOSFET

FET Feature: Logic Level Gate

Mounting Type: Surface Mount

Power-Maximum: 3W

Operating temperature: 150C

Drain to Source voltage: 30V

Continuous drain current: 14A

Current - Drain (Id) (25°C): 14A

Field-effect transistor type: 2N-Channel(Dual)

Gate Charge - (when applying Vgs): 24nC@4.5V

On Voltage - (Vgs when Id is applied): 2.5V@10mA

On Resistance - (Rds when Id,Vgs is applied): 5mOhm@14A|10V

Input Capacitance - (Ciss when Vds is applied): 2550pF@15V