ROHM Semiconductor EM6M1T2R MOSFET Small Signals Sm Signal, Sw MOSFET N/P Ch, -20V, 0.15A

Technology: Si

Unit Weight: 6 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 900 pC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 150 mW

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Id - Continuous Drain Current: 100 mA, 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 8 Ohms

Vds - Drain-Source Breakdown Voltage: 30 V, 20 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V