ROHM Semiconductor DTC314TUT106 Pre-Biased Bipolar Transistor
ModelDTC314TUT106
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Mounting Type: Surface Mount
Power-Maximum: 200mW
Transistor type: NPN-Prebias
Collector current: 600mA
DC electricity gain: 100@50mA@5V
Frequency-Transition: 200MHz
Resistance-Base (R1): 10kOhms
Vce Saturation (maximum): 80mV@2.5mA,50mA
Collector-emitter voltage: 15V
DC current gain (hFE) (minimum): 100@50mA,5V
Current-Collector (Ic) (maximum): 600mA
Current-Collector cutoff (maximum): 500nA(ICBO)
Voltage-Collector-emitter breakdown (maximum): 15V
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