ROHM Semiconductor DTC143ESATP Pre-Biased Bipolar Transistor
ModelDTC143ESATP
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R1/R2: 1
Mounting Type: Through Hole
Power-Maximum: 300mW
Transistor type: NPN-Prebias
Collector current: 100mA
DC electricity gain: 30@10mA@5V
Frequency-Transition: 250MHz
Resistance-Base (R1): 4.7kOhms
Vce Saturation (maximum): 300mV@500uA,10mA
Resistance-Emitter base (R2): 4.7kOhms
DC current gain (hFE) (minimum): 30@10mA,5V
Current-Collector (Ic) (maximum): 100mA
Current-Collector cutoff (maximum): 500nA
Voltage-Collector-emitter breakdown (maximum): 50V
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