ROHM Semiconductor DTC124ESATP Pre-Biased Bipolar Transistor
ModelDTC124ESATP
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R1/R2: 1
Mounting Type: Through Hole
Power-Maximum: 300mW
Transistor type: NPN-Prebias
Collector current: 100mA
DC electricity gain: 56@5mA@5V
Frequency-Transition: 250MHz
Resistance-Base (R1): 22kOhms
Vce Saturation (maximum): 300mV@500uA,10mA
Collector-emitter voltage: 50V
Resistance-Emitter base (R2): 22kOhms
DC current gain (hFE) (minimum): 56@5mA,5V
Current-Collector (Ic) (maximum): 30mA
Current-Collector cutoff (maximum): 500nA
Voltage-Collector-emitter breakdown (maximum): 50V
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