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ROHM Semiconductor BCX70KT216 BJTs - Bipolar Transistors TRANSISTOR

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Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

DC Current Gain hFE Max: 630 at 2 mA, 5 V

Gain Bandwidth Product fT: 125 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 45 V

Continuous Collector Current: 200 mA

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 250 at 2 mA, 5 V

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 550 mV

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