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Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 350 mW
DC Current Gain hFE Max: 450 at 2 mA, 5 V
Gain Bandwidth Product fT: 300 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 80 V
Continuous Collector Current: 120 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 200 at 2 mA, 5 V
Collector- Emitter Voltage VCEO Max: 65 V
Collector-Emitter Saturation Voltage: 400 mV
