ROHM Semiconductor 2SD2351U3T106W BJTs - Bipolar Transistors NPN, SOT-323, 50V 150mA, High hFE Transistor

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 2700

Gain Bandwidth Product fT: 250 MHz

Emitter- Base Voltage VEBO: 12 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 150 mA

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 820

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 300 mV