ROHM Semiconductor 2SAR587D3TL1 BJTs - Bipolar Transistors PNP -3.0A -120V Power Transistor. 2SAR587D3 is a power transistor with Low VCE(sat), suitable for low frequency amplifier.

Technology: Si

Unit Weight: 389 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 10 W

DC Current Gain hFE Max: 390 at - 100 mA, - 5 V

Gain Bandwidth Product fT: 250 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 120 V

Continuous Collector Current: - 3 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120 at - 100 mA, - 5 V

Collector- Emitter Voltage VCEO Max: 120 V

Collector-Emitter Saturation Voltage: 200 mV