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Width: 3.3 mm
Height: 0.8 mm
Length: 3.3 mm
Fall Time: 120 ns
Rise Time: 94 ns
Technology: Si
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 37 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 1.5 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 50 ns
Typical Turn-Off Delay Time: 120 ns
Id - Continuous Drain Current: 27 A
Maximum Operating Temperature: + 150 C
Forward Transconductance - Min: 25 S
Rds On - Drain-Source Resistance: 4.3 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
