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Width: 10 mm
Height: 4.4 mm
Length: 10.2 mm
Fall Time: 13.3 us
Rise Time: 99.3 us
Technology: Si
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 100 W
Vgs - Gate-Source Voltage: - 2.5 V, + 16 V
Typical Turn-On Delay Time: 24.7 us
Typical Turn-Off Delay Time: 7.44 us
Id - Continuous Drain Current: 74 A
Maximum Operating Temperature: + 150 C
Forward Transconductance - Min: 20 S
Rds On - Drain-Source Resistance: 13 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
