Renesas Electronics RBN40H65T1FPQ-A0#CB0 IGBT Transistors POWER TRANSISTOR 650V 40A IGBT G8H
ModelRBN40H65T1FPQ-A0#CB0
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 185 W
Gate-Emitter Leakage Current: 1 uA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 175 C
Collector- Emitter Voltage VCEO Max: 650 V
Continuous Collector Current Ic Max: 40 A
Collector-Emitter Saturation Voltage: 1.5 V
Continuous Collector Current at 25 C: 80 A
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