Renesas Electronics RBN25H125S1FPQ-A0#CB0 IGBT Transistors IGBT-G8H 1250V/25A built-in FRD TO247A
ModelRBN25H125S1FPQ-A0#CB0
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 223 W
Gate-Emitter Leakage Current: 1 uA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 175 C
Collector- Emitter Voltage VCEO Max: 1.25 kV
Continuous Collector Current Ic Max: 25 A
Collector-Emitter Saturation Voltage: 1.8 V
Continuous Collector Current at 25 C: 50 A
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