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Width: 9.15 mm
Height: 4.9 mm
Length: 10 mm
Fall Time: 11 ns
Rise Time: 14 ns
Technology: Si
Unit Weight: 1.600 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: N-Channel MOS Field Effect Transistor
Qg - Gate Charge: 126 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 250 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 30 ns
Typical Turn-Off Delay Time: 100 ns
Id - Continuous Drain Current: 160 A
Maximum Operating Temperature: + 175 C
Rds On - Drain-Source Resistance: 2.1 mOhms
Vds - Drain-Source Breakdown Voltage: 55 V
Vgs th - Gate-Source Threshold Voltage: 4 V
