Renesas Electronics AT25DN512C-SSHFGP-B Flash Memory

Density: 512 Kb

Package: 8SOIC

Mounting: Surface Mount

Rad Hard: 0

MSL Level: MSL 1 - Unlimited

Pin Count: 8

Boot Block: No

Interfaces: SPI

Access Time: 6 ns

ECC Support: No

Lead Finish: Gold over Nickel Palladium

No. of Pins: 8

Architecture: Sectored

Interface Type: Serial-SPI

Memory Density: 512 Kb

Number of Words: 512 kWords

Program Current: 16 mA

Screening Level: Industrial

Supplier Package: SOIC

Block Organization: Symmetrical

Maximum Erase Time: 0.7/Chip s

Product Dimensions: 5.05 x 3.99 x 1.5 mm

Supply Voltage Nom: 2.5, 3.3 V

Clock Frequency Max: 104 MHz

Max Processing Temp: 260 °C

Programming Voltage: 2.3 to 3.6 V

Operating Temperature: -40 to 85 °C

Number of Bits per Word: 1 Bit

Maximum Programming Time: 1.75/Page ms

Maximum Operating Current: 12 mA

Operating Temperature Max: 85 °C

Operating Temperature Min: -40 °C

Maximum Random Access Time: 6 ns

Simultaneous Read/Write Support: No

Typical Operating Supply Voltage: 2.5, 3.3 V

Erase Suspend/Resume Modes Support: No