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Width: mm
Height: mm
Length: mm
Technology: Si
Unit Weight: 1.600 g
Channel Mode: Enhancement
Mounting Style: Through Hole
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 100 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Id - Continuous Drain Current: 2.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 12 Ohms
Vds - Drain-Source Breakdown Voltage: 1.5 kV
Vgs th - Gate-Source Threshold Voltage: 4 V
