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Technology: Si
Unit Weight: 8 mg
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 250 mW
DC Current Gain hFE Max: 250
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 180 V
Continuous Collector Current: 600 mA
DC Collector/Base Gain hfe Min: 80
Collector- Emitter Voltage VCEO Max: 160 V
