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Technology: Si
Unit Weight: 8 mg
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 250 mW
DC Current Gain hFE Max: 600
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 45 V
DC Collector/Base Gain hfe Min: 40
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 700 mV
