Qorvo TGF3015-SM GaN FETs .03-3GHz Gain 17dB P3dB 9.3W@2.4GHz GaN
ManufacturerQorvo(View more products from this manufacturer)
ModelTGF3015-SM
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Gain: 17.1 dB
Technology: GaN
Unit Weight: 6.745 g
Output Power: 11 W
Configuration: Single
Mounting Style: SMD/SMT
Development Kit: TGF3015-SM-EVB1
Transistor Type: HEMT
Moisture Sensitive: Yes
Transistor Polarity: N-Channel
Pd - Power Dissipation: 15.3 W
Maximum Operating Frequency: 3 GHz
Minimum Operating Frequency: 30 MHz
Id - Continuous Drain Current: 557 mA
Vgs - Gate-Source Breakdown Voltage: - 2.7 V
Vds - Drain-Source Breakdown Voltage: 32 V
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