Qorvo TGF2977-SM GaN SiC HEMT 8-12GHz 5W GaN PAE 50% Gain 13dB
ManufacturerQorvo(View more products from this manufacturer)
ModelTGF2977-SM
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Gain: 13 dB
Technology: GaN
Unit Weight: 57.100 mg
Output Power: 6 W
Configuration: Single
Mounting Style: SMD/SMT
Development Kit: TGF2977-SMEVB1
Transistor Type: HEMT
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 8.4 W
Maximum Operating Frequency: 12 GHz
Minimum Operating Frequency: 0 Hz
Id - Continuous Drain Current: 326 mA
Maximum Operating Temperature: + 225 C
Vgs - Gate-Source Breakdown Voltage: - 2.7 V
Vds - Drain-Source Breakdown Voltage: 32 V
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