Qorvo TGF2819-FS GaN SiC HEMT DC-3.5GHz 32V GaN PAE 58% at 3.3GHz

Gain: 14 dB

Technology: GaN

Output Power: 100 W

Configuration: Single

Mounting Style: SMD/SMT

Development Kit: TGF2819-FS/FL, EVAL BOARD

Transistor Type: HEMT

Moisture Sensitive: Yes

Transistor Polarity: N-Channel

Pd - Power Dissipation: 86 W

Maximum Drain Gate Voltage: 145 V

Maximum Operating Frequency: 3.5 GHz

Id - Continuous Drain Current: 7.32 A

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: - 2.9 V

Vds - Drain-Source Breakdown Voltage: 32 V